首页 |元器件品牌

SBL830 [BL Galaxy Electrical]

SCHOTTKY BARRIER RECTIFIER; 肖特基势垒整流器
SBL830
型号： SBL830
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

SCHOTTKY BARRIER RECTIFIER
肖特基势垒整流器

二极管
文件： 总2页 (文件大小：179K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SBL830---SBL8100  
GALAXY ELECTRICAL  
BL  
VOLTAGE RANGE: 30 --- 100 V  
CURRENT: 8.0 A  
SCHOTTKY BARRIER RECTIFIER  
FEATURES  
TO - 220AC  
Metal-Semiconductor junction with guard ring  
Epitaxial construction  
Low forward voltage drop,low switching losses  
High surge capability  
For use in low voltage,high frequencyinverters free  
xxxx wheeling,and polarityprotection applications  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC TO--220AC,molded plastic  
Terminals: Leads solderable per  
MIL- STD-750,Method 2026  
Polarity: As marked  
Weight: 0.064 ounces,1.81 gram  
Mounting position: Any  
(mm)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
SBL SBL SBL SBL SBL SBL SBL SBL SBL SBL  
830 835 840 845 850 860 870 880 890 8100  
UNITS  
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
30 35 40  
21 25 28  
30 35 40  
45  
32  
45  
50  
35  
50  
60  
42  
60  
70  
49  
70  
80  
56  
80  
90 100  
63 70  
90 100  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximumaverage forw ard rectified current  
TC=95  
8.0  
A
IF(AV)  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load TJ=125  
IFSM  
200  
A
Maximuminstantaneous forw ard voltage  
@ 8.0A  
0.55  
0.70  
0.85  
VF  
V
Maximumreverse current  
at rated DC blocking voltage @TC=100  
Typical thermal resistance (Note1)  
@TC=25  
0.5  
55  
mA  
/W  
IR  
6.9  
RθJC  
Operating junction temperature range  
-55--- + 150  
-55--- + 150  
T
J
Storage temperature range  
TSTG  
Note: 1. Thermal resistance junction to case.  
www.galaxycn.com  
Document Number 0267061  
BLGALAXY ELECTRICAL  
1.  
RATINGS AND CHARACTERISTIC CURVES  
SBL830---SBL8100  
FIG.1 -- PEAK FORWARD SURGE CURRENT  
FIG.2 -- FORWARD DERATING CURVE  
10  
200  
8.0  
6.0  
4.0  
2.0  
0
160  
8.3ms Single Half Sine Wave  
TJ=125  
120  
80  
40  
25  
50  
75  
100  
125  
150  
0
1
10  
100  
NUMBER OF CYCLES AT60HZ  
CASE TEMPERATURE,  
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC  
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC  
10  
2 0 0  
Tc=100  
1 0 0  
SBL830-SBL845  
SBL870-SBL8100  
1
SBL850-SBL860  
TC=25  
10  
.1  
T J = 2 5  
P u ls e w id th = 3 0 0  
1 % D u ty C y c le  
s
1
.01  
.2  
.4  
.6  
.8  
1.0  
1 .2 1 .4  
1 .6 1 .8 2 . 0  
2 . 2  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE  
INSTANTANEOUS FORWARDVOLTAGE, VOLTS  
www.galaxycn.com  
Document Number 0267061  
2.  
BLGALAXY ELECTRICAL  

相关型号：

SBL830(TUBE)

 暂无描述
DIODES

SBL830-A

 Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon
DIODES

SBL830-B

 Rectifier Diode,
MCC

SBL830-BP

 Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-2
MCC

SBL830_1

 8.0A SCHOTTKY BARRIER RECTIFIER
DIODES

SBL830{TUBE}

 Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon
DIODES

SBL835

 8.0A SCHOTTKY BARRIER RECTIFIER
DIODES

SBL835

 肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。
SIRECTIFIER

SBL835

 SCHOTTKY BARRIER RECTIFIER
BL Galaxy Ele

SBL835(TUBE)

 暂无描述
DIODES

SBL835-A

 暂无描述
DIODES

SBL835{TUBE}

 Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon
DIODES
©2020 ICPDF网 联系我们和版权申明